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Arvind Kumar 10th November 2020 09:55 AM

Sathyabama Institute of Science and Technology BE ECE SECA1101 Electronic Devices Syllabus
 
Sathyabama Institute of Science and Technology BE ECE SECA1101 Electronic Devices Syllabus

SATHYABAMA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL OF ELECTRICAL AND ELECTRONICS

SECA1101 ELECTRONIC DEVICES
L T P Credits Total Marks
3 0 0 3 100

UNIT 1 SEMICONDUCTOR DIODE 9 Hrs.
PN junction diode- construction and operation, Current equations, Diffusion and drift current densities, forward and reverse
bias characteristics, Breakdown in PN Junction Diodes. Applications- Rectifiers, Limiting and Clamping Circuits, Zener
diode- construction and VI characteristics.

UNIT 2 BIPOLAR JUNCTION TRANSISTOR 9 Hrs.
Bipolar junction transistors, NPN -PNP, construction, forward and reverse bias characteristics -Early effect, current
equations- Input and Output characteristics of CE, CB CC- Ebers Moll Model- Multi Emitter Transistor, Gummel Poon-model.

UNIT 3 FIELD EFFECT TRANSISTORS 9 Hrs.
JFETs – Drain and Transfer characteristics, -Current Equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics – Comparison of
MOSFET with JFET, DUAL GATE MOSFET.

UNIT 4 SPECIAL SEMICONDUCTOR DEVICES 9 Hrs.
Schottky barrier diode-SCR, DIAC, TRIAC, Varactor diode, Tunnel diode, UJT, LDR, Photo transistor, Gallium Arsenide
device.

UNIT 5 POWER DEVICES AND DISPLAY DEVICES 9 Hrs.
Power BJT- Power MOSFET- DMOS-VMOS, CRO, LASER diode, Operation of LCDs, Plasma, LED, Opto-Coupler, Solar
cell, CCD.
Max. 45 Hrs.

COURSE OUTCOMES
On completion of the course, student will be able to
CO1 - Apply the knowledge of basic semiconductor materials and understand fabrication processes.
CO2 - Analyse the characteristics of various electronic devices like diode, transistor etc.
CO3 - Classify and analyse the various circuit configurations of Transistor and MOSFETs.
CO4 - Illustrate the qualitative knowledge of Power electronic Devices.
CO5 - Become Aware of the latest technological changes in Display Devices.
CO6 - Apply the knowledge of basic semiconductor materials and understand fabrication processes.

TEXT / REFERENCE BOOKS
1. Donald A Neaman, ”Semiconductor Physics and Devices”, 4th Edition, Tata McGraw Hill Inc. 2012.
2. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, ”Electronic Devices and circuits”, 3rd Edition, Tata McGraw Hill, 2008.
3. David Bell, “Fundamentals of Electronic Devices and Circuits”, 5th Edition, Oxford University Press 2012.
4. Robert Boylestad and Louis Nashelsky, ”Electron Devices and Circuit Theory” Pearson Prentice Hall, 10th Edition,
2008.
5. R.S.Sedha, “A Text Book of Applied Electronics”, S.Chand Publications, 2006.
6. Edward S.Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.

END SEMESTER EXAMINATION QUESTION PAPER PATTERN
Max. Marks: 100 Exam Duration: 3 Hrs.
PART A: 10 Questions of 2 mark search – No choice 20 Marks
PART B: 2 Questions from each unit of internal choice; each carrying 16 marks 80 Marks


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