| 31st January 2013 12:14 PM | |
| Arvind Kumar | Re: IES Question Papers Here I am providing you one solved sample paper of Electronics & Telecommunication Engineering of IES. 01. The I-V characteristics of a tunnel diode exhibit (a) current-controlled negative resistance (b) voltage-controlled negative resistance (c) temperature-controlled positive resistance (d) current-controlled positive resistance Ans : (b) 02. A gate to drain-connected enhancement mode MOSFET is an example of (a) an active load (b) a switching device (c) a three-terminal device (d) a three-terminal device Ans : (d) 03. Thermal runway is not possible in FET because, as the temperature of FET increases (a) the drain current increases (b) the mobility increases (c) the mobility decreases (d) the transconductance increases Ans : (c) 04. The output impedance of a BJT under common-collector configuration is (a) low (b) high (c) medium (d) very high Ans : (a) 05. Consider the following statements related to JFET: 1. Its operation depends on the flow of minority carriers only. 2. It is less noisy than BJT 3. It has poor thermal stability 4. It is relatively immune to radiation The correct statements are (a) 1, 2, 3 and 4 (b) 1 and 2 only (c) 2 and 4 only (d) 3 and 4 only Ans : (c) Here I am attaching a file to get the full solved sample paper of Electronics & Telecommunication Engineering of IES download this attachment it is free to download. |
| 29th January 2013 12:22 PM | |
| tejaji | IES Question Papers I want to given paper of Electronics & Telecommunication Engineering of IES so please provide me solved sample paper of IES. |
