Sample Question Paper For Drdo Exam

I am looking for Sample Question Paper for DRDO Exam preparation so would you plz tell me from where I can collect it ??

[KunwarR]

As you are looking for Sample Question Paper for DRDO Exam preparation so on your demand I am providing same here :

1.The current I in the given network.
a) 1A b) 3A c) 5A d) 7A

2.For the Delta- Wye transformation in given figure, the value of the resistance R is.
a) 1/3 ohms b) 2/3 ohms c) 3/2 ohms d) 3 ohms

3.In the given network, the Thevenin’s equivalent as seen by the load resistance Rl is
a) V=10 V, R= 2ohms b) V=10V, R=3 ohms c) V=15V, R= 2ohms d) V=15V, R=3 ohms

4.The current I in a series R-L circuit with R=10 ohms and L=20mH is given by i=2sin500t A. If v is the voltage across the R-L combination then i
a) lags v by 45 degree b) is in-phase with v c) leads v by 45 d) lags v by 90

5.In thr given network, the mesh current I and the input impedance seen by the 50 V source, respectively, are
a) 125/13 A and 11/8 ohms b) 150/13 A and 13/8 ohms c) 150/13 A and 11/8 ohms d) 125/13 A and 13/8 ohms

6.A voltage sourcehaving a source impedance Z = R + jX can deliver maximum Average power to a load impedance Z, when
a) Z = R + jX b) Z = R c) Z = jX d) Z = R –jX

7.In the given circuit, the switch S is closed at t=0. Assuming that there is no initial Charge in the capacitor, the current i(t) for t>0 is
a) V/R e^ (-2t/RC) b) V/R e^ (-t/RC) c) V/2R e^ (-2t/RC) d) V/2R e^ (-t/RC)

8.For the circuit in given figure, if e(t) is a ramp signal, the steady state value of the Output voltage v(t) is
a) 0 b) LC c) R/L d) RC

9.For the series RLC circuit in given figure, if w=1000 rad/sec, then the current I (in Amperes) is
a) 2 ∟-15 b) 2 ∟15 c) √2∟-15 d) √2∟15

10.The Y-parameter matrix (mA/V) of the two-port given network is
a) [2 -1 -1 2] b) [2 1 -1 2] c) [1 -2 -1 2] d) [2 1 1 2]

11.The maximum number of trees of the given graph is
a) 16 b) 25 c) 100 d) 125

12.Given figure shows a graph and one of its trees. Corresponding to the tree, the group of branches that CAN NOT constitute a fundamental cut set is
a) 1,2,3 b) 1,4,6,8,3 c) 5,6,8,3 d) 4,6,7,3


13.The Y-parameter matrix of a network is given by Y=[1 1 -1 1] A/V. The Z11 parameter of the same network is
a) ½ ohms b) 1/√2 ohms c) 1 ohms d) 2 ohms

14.For the given circuit, the switch was kept closed for a long time before opening it at t=0. The voltage v(0+) is
a) -10 V b) -1 V c) 0V d) 10 V

15.The input impedance of a series RLC circuit operating at frequency W=√2w, w being the resonant frequency, is
a) R-j(wL/√2) ohms b) R+j(wL/√2) ohms c) R-j√2wL ohms d) R-j√2wL ohms

16.The threshold voltage V is negative for
a) an n-channel enhancement MOSFET b) an n-channel depletion MOSFET c) an p-channel depletion MOSFET d) an p-channel JFET

17.At a given temperature, a semiconductor with intrinsic carrier concentration ni= 10 ^ 16 / m^3 is doped with a donor dopant of concentration Nd = 10 ^ 26 /m^3. Temperature remaining the same, the hole concentration in the doped semiconductor is
a) 10 ^ 26 /m^3 b) 10 ^ 16 /m^3 c) 10 ^ 14 /m^3 d) 10 ^ 6 /m^3}

18.At room temperature, the diffusion and drift constants for holes in a P-type semiconductor were measured to be Dp = 10 cm^2/s and µp = 1200 cm^2/V-s, respectively. If the diffusion constant of electrons in an N-type semiconductor at the same temperature is Dn = 20 cm^2/s, the drift constant for electrons in it is
a) µn = 2400 cm^2/V-s b) µn = 1200 cm^2/V-s c) µn = 1000 cm^2/V-s d) µn = 600 cm^2/V-s

19.A common LED is made up of
a) intrinsic semiconductor b) direct semiconductor c) degenerate semiconductor d) indirect semiconductor

20.When operating as a voltage regulator, the breakdown in a Zener diode occurs due to the
a) tunneling effect b) avalanche breakdown c) impact ionization d) excess heating of the junction.

21.If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is
a) 51 b) 49 c) 1 d) 0.02

DRDO Exam sample question paper